Theoretical investigation of sulfur defects on structural, electronic, and elastic properties of ZnSe semiconductor
Zafar Muhammad†a), Ahmed Shabbira), Shakil M.a), Choudhary M. A.a), Mahmood K.b)
       
Band structures of ZnSe1− x S x at different concentrations of x : (a) x = 0, (b) x = 0.25, (c) x = 0.50, (d) x = 0.75, (e) x = 1.00.