Synthesis mechanism of heterovalent Sn2O3 nanosheets in oxidation annealing process
Zhao Jun-Hua†a), Tan Rui-Qinb), Yang Yec), Xu Weic), Li Jiac), Shen Wen-Fengc), Wu Guo-Qianga), Yang Xu-Fenga), Song Wei-Jiec)
       
The valence-band XPS spectra of Sn3O4 annealed under argon protective atmosphere at 300 °C and 500 °C with the vacuum levels of 105 Pa to 10−4 Pa.