Synthesis mechanism of heterovalent Sn
2
O
3
nanosheets in oxidation annealing process
Zhao Jun-Hua†
a)
, Tan Rui-Qin
b)
, Yang Ye
c)
, Xu Wei
c)
, Li Jia
c)
, Shen Wen-Feng
c)
, Wu Guo-Qiang
a)
, Yang Xu-Feng
a)
, Song Wei-Jie
c)
The valence-band XPS spectra of Sn
3
O
4
annealed under argon protective atmosphere at 300 °C and 500 °C with the vacuum levels of 10
5
Pa to 10
−4
Pa.