Progress and prospects of GaN-based LEDs using nanostructures*
Zhao Li-Xia†, Yu Zhi-Guo, Sun Bo, Zhu Shi-Chao, An Ping-Bo, Yang Chao, Liu Lei, Wang Jun-Xi, Li Jin-Min
       
(a) Schematic diagrams of fabrication process for nanotextured flip-chip LEDs. (b) Light-output power of the nanotextured flip-chip LEDs as a function of chemical etching times, with the corresponding SEM images of nanotextured n-GaN surface shown in the background. (c) FDTD simulation results of wave propagating through an individual hemisphere surface feature and (d) an individual hemisphere-cones-hybrid surface feature.