Phosphor-free white light-emitting diodes*
Guo Xia†, Liu Qiao-Li, Li Chong, Liu Bai, Dong Jian, Shen Guang-Di
       
(a) Schematic diagram of the structure of the flip-chip hybrid integrated white LED, which was composed of InGaN/GaN and AlGaInP/GaAs MQWs. (b) TEM image of the GaN and GaAs bonding interface with a 2-nm–3-nm-thick amorphous layer located between the two surfaces. (c) I – V curves of a hybrid integrated white LED and the individual LEDs before bonding. (d) EL spectra of the hybrid integrated white LED with current injection from 10 mA to 40 mA. (e) Chromatic coordinates of the hybrid integrated white LED under current injection in the range from 10 mA to 40 mA.