Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates*
Liu Ming-Gang, Yang Yi-Bin, Xiang Peng, Chen Wei-Jie, Han Xiao-Biao, Lin Xiu-Qi, Lin Jia-Li, Luo Hui, Liao Qiang, Zang Wen-Jie, Wu Zhi-Sheng, Liu Yang, Zhang Bai-Jun†
       
AFM surface morphology of (a) sample M1, (b) sample M2, (c) sample M3, scan size: 3 μm×3 μm; microstructures indicated by arrows are indium-rich clusters formed in V-pits.