Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates<xref ref-type="fn" rid="cpb142991fn1">*</xref>

Influences of stress on the properties of GaN/InGaN multiple quantum well LEDs grown on Si (111) substrates*

Liu Ming-Gang, Yang Yi-Bin, Xiang Peng, Chen Wei-Jie, Han Xiao-Biao, Lin Xiu-Qi, Lin Jia-Li, Luo Hui, Liao Qiang, Zang Wen-Jie, Wu Zhi-Sheng, Liu Yang, Zhang Bai-Jun†

XRD (0004) ω /2 θ scan measurements of sample M1 (with InGaN IL), sample M2 (without IL), sample M3 (with AlGaN IL), an enlarged view of InGaN zero-order peaks is shown in the inset.