Non-ideal effect in 4H–SiC bipolar junction transistor with double Gaussian-doped base
*
Yuan Lei
a)
, Zhang Yu-Ming
a)
, Song Qing-Wen
a),
b)†
, Tang Xiao-Yan
a)
, Zhang Yi-Men
a)
Comparisons of the simulated current gain with experimental results for different emitter widths.