Non-ideal effect in 4H–SiC bipolar junction transistor with double Gaussian-doped base<xref ref-type="fn" rid="cpb142942fn1">*</xref>

Non-ideal effect in 4H–SiC bipolar junction transistor with double Gaussian-doped base*

Yuan Lei^a), Zhang Yu-Ming^a), Song Qing-Wen^a),^b)†, Tang Xiao-Yan^a), Zhang Yi-Men^a)

Schematic cross section of the fabricated 4H–SiC BJT.