GaN substrate and GaN homo-epitaxy for LEDs: Progress and challenges<xref ref-type="fn" rid="cpb150941fn1">*</xref>

GaN substrate and GaN homo-epitaxy for LEDs: Progress and challenges*

Wu Jie-Jun, Wang Kun, Yu Tong-Jun†, Zhang Guo-Yi

Schematic diagrams of growth mode changes in the two states in PFM method, solid circles represent Ga atoms and hollow circles represent active N atoms.^{[ 35 ]}