Silicon nanowire formed via shallow anisotropic etching Si-ash-trimming for specific DNA and electrochemical detection
Adam Tijjania)† 
, HAshim U.a)‡ , Dhahi Th S.b)§
, HAshim U., Dhahi Th S. 
Silicon nanowire formed via shallow anisotropic etching Si-ash-trimming for specific DNA and electrochemical detection |
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Adam Tijjani
, HAshim U., Dhahi Th S. |
| Absorbance UV/Vis/NIR spectra of the two materials (silicon and APTES). |
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