Progress in research of GaN-based LEDs fabricated on SiC substrate<xref ref-type="fn" rid="cpb150103fn1">*</xref>

Progress in research of GaN-based LEDs fabricated on SiC substrate*

Xu Hua-Yong^a),^b), Chen Xiu-Fang^a), Peng Yan^a), Xu Ming-Sheng^a),^c), Shen Yan^a),^c), Hu Xiao-Bo^a)†, Xu Xian-Gang^a),^c)

AFM images of different buffer layers. (a) AlN nucleation layer; (b) AlGaN nucleation layer grown at 1020 °C; (c) AlGaN nucleation layer grown at 1100 °C.^{[ 23 ]}