Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes*
Wang Lai†, Yang Di, Hao Zhi-Biao, Luo Yi
       
(a) Transmission electron microscopy image of 10-layer InGaN QDs; (b) temperature-dependent PL spectra of 10-layer InGaN QDs. The radiative recombination efficiency estimated by ratio of PL intensity at 300 K to 13 K is about 24%. Reprinted from Ref. [ 34 ].