Metal–organic–vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes*
Wang Lai†, Yang Di, Hao Zhi-Biao, Luo Yi
       
Critical thicknesses of InGaN grown on (0001) GaN for different strain relaxation: dislocation generation (dashed line) and three-dimensional growth (solid line). Reprinted from Ref. [ 12 ], Copyright 2011, with permission from Elsevier.