Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression*
He Xiao-Guang, Zhao De-Gang†, Jiang De-Sheng
       
Energy band of an n-doped AlGaN/GaN heterostructure. When contacting a GaN layer, electrons will flow into the GaN side, accumulate at the interface and form 2DEG.