Progress in bulk GaN growth<xref ref-type="fn" rid="cpb151014fn1">*</xref>

Progress in bulk GaN growth*

Xu Ke^a),^b)†, Wang Jian-Feng^a),^b), Ren Guo-Qiang^a),^b)

(a) and (b) Photographs of GaN bulk crystal grown on the small spontaneously nucleated GaN seed by a long growth period. (from Refs. [ 78 ] and [ 79 ]); (a1)–(a3) and (b1)–(b3): Morphology of the spontaneously nucleated GaN crystals grown by Na-flux method. (Temperature: 973 K∼ 1073 K, pressure: 2.0 MPa∼ 3.5 MPa).