Progress in bulk GaN growth*
Xu Kea),b)†, Wang Jian-Fenga),b), Ren Guo-Qianga),b)
       
(a) A series of characteristic IR luminescence with a sharp zero-phonon line (ZPL) at 1.299 eV at low temperature, (b) quenching of the intensity of near band edge excitonic emissions in the UV region, (c) a kind of phonon mode originating from VN.