Progress in bulk GaN growth<xref ref-type="fn" rid="cpb151014fn1">*</xref>

Progress in bulk GaN growth*

Xu Ke^a),^b)†, Wang Jian-Feng^a),^b), Ren Guo-Qiang^a),^b)

(a) SEM image of GaN NW array,^{[ 40 ]} (b) weak beam dark-field TEM image with g = 11-22, revealing that the GaN NW does not possess dislocations,^{[ 40 ]} (c) photo of a 400-μm GaN based on the PEC GaN NW arrays template, (d) panchromatic CL image shows that the DD of panel (a) is 3 × 10⁶ cm⁻².