Graded doping low internal loss 1060-nm InGaAs/AlGaAs quantum well semiconductor lasers<xref ref-type="fn" rid="cpb142730fn1">*</xref>

Graded doping low internal loss 1060-nm InGaAs/AlGaAs quantum well semiconductor lasers*

Tan Shao-Yang†, Zhai Teng, Zhang Rui-Kang, Lu Dan, Wang Wei, Ji Chen

Plots of inverse external differential quantum efficiency 1/ η _d versus cavity length L .