Determining the influence of ferroelectric polarization on electrical characteristics in organic ferroelectric field-effect transistors*
Fu Zong-Yuana), Zhang Jian-Chib), Hu Jing-Hanga), Jiang Yu-Longb)†, Ding Shi-Jinb)‡, Zhu Guo-Donga)§
       
The influence of the writing/erasing pulse period on on/off measurements in OFeFETs. (a) Changes in polarization and drain currents with time as five bipolar rectangular pulses are applied with the period of 4 × ( t s_OFF+ t s_ON). The ferroelectric layer is assumed to be initially in negative polarization state and then the positive erasing and the negative writing pulses are sequentially applied. The five E/W pulses are also schematically plotted. (b) Changes in polarization (lower panel) and drain current (upper panel) with time as ten bipolar rectangular pulses are applied with the period of ( t s_OFF+ t s_ON)/2. For all calculations, bipolar rectangular W/E gate pulses with 60 V amplitude and 50% duty ratio are applied and the drain current is calculated at V ds = −3 V.