Determining the influence of ferroelectric polarization on electrical characteristics in organic ferroelectric field-effect transistors<xref ref-type="fn" rid="cpb142650fn1">*</xref>

Determining the influence of ferroelectric polarization on electrical characteristics in organic ferroelectric field-effect transistors*

Fu Zong-Yuan^a), Zhang Jian-Chi^b), Hu Jing-Hang^a), Jiang Yu-Long^b)†, Ding Shi-Jin^b)‡, Zhu Guo-Dong^a)§

(a) Simulated P – V _g hysteresis loops of the ferroelectric layer and (b) the simultaneously obtained transfer characteristic of the OFeFET structure. Transfer curves are obtained at V _ds = –3 V. The labels, ‘P(VDF-TrFE)’ and ‘SiO₂’, in panel (b) indicate the dielectric layer used for the calculations. Inset in panel (a) shows the schematic structure of the OFeFET used in our calculation, and inset in panel (b) is the semilogarithmic plot of the transfer curves.