Asymmetric resistive switching processes in W:AlO x/WO y bilayer devices
Wu Hua-Qiang†, Wu Ming-Hao, Li Xin-Yi, Bai Yue, Deng Ning, Yu Zhi-Ping, Qian He
       
(a) During the SET process, oxygen ions migrate to Al TE and partially oxidize the Al TE. (b) During the RESET operation, under both electrical field and thermal process, the oxygen ions broken from Al–O bonds or locally thermal generated in the switching layer could rupture the CFs.