Asymmetric resistive switching processes in W:AlO x/WO y bilayer devices
Wu Hua-Qiang†, Wu Ming-Hao, Li Xin-Yi, Bai Yue, Deng Ning, Yu Zhi-Ping, Qian He
       
Pulse measurements on W:AlO x /WO y RRAM cells with (a) different SET pulse widths, (b) different RESET pulse widths, (c) different SET pulse amplitudes, and (d) different RESET amplitudes.