Asymmetric resistive switching processes in W:AlO x/WO y bilayer devices
Wu Hua-Qiang†, Wu Ming-Hao, Li Xin-Yi, Bai Yue, Deng Ning, Yu Zhi-Ping, Qian He
       
(a) Schematic of the W:AlO x /WO y bilayer RRAM device with 1T1R structure and major fabrication steps; (b) cross-sectional TEM images of the 1T1R structure.