Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage*
Shi Minga)†, Chen Pinga)†, Zhao De-Ganga)‡, Jiang De-Shenga), Zheng Juna), Cheng Bu-Wena), Zhu Jian-Juna), Liu Zong-Shuna), Liu Weia), Li Xianga), Zhao Dan-Meia), Wang Qi-Minga), Liu Jian-Pingb), Zhang Shu-Mingb), Yang Huib)
       
Field emission current of undoped AlN (black) and Si-doped AlN (red) film samples as a function of the applied bias voltage. The inset shows the I – V curve of Si-doped AlN near the turn-on voltage region (marked by an arrow).