Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates |
(a) Proposed growth mode of (10-11) GaN growth at 500 mbar, the dark line is the dislocation and the stack defects between the two strips connect position. (b) Proposed mode for (10-11) GaN growth at 1013 mbar. (c) Enlarged cross-section SEM image for the growth at 1013 mbar. |