Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates*
Liu Jian-Minga)†, Zhang Jiea), Lin Wen-Yua), Ye Meng-Xina), Feng Xiang-Xua), Zhang Dong-Yana), Steve Dinga), Xu Chen-Kea), Liu Bao-Linb)
       
(a) Proposed growth mode of (10-11) GaN growth at 500 mbar, the dark line is the dislocation and the stack defects between the two strips connect position. (b) Proposed mode for (10-11) GaN growth at 1013 mbar. (c) Enlarged cross-section SEM image for the growth at 1013 mbar.