Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates
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Liu Jian-Ming
a)†
, Zhang Jie
a)
, Lin Wen-Yu
a)
, Ye Meng-Xin
a)
, Feng Xiang-Xu
a)
, Zhang Dong-Yan
a)
, Steve Ding
a)
, Xu Chen-Ke
a)
, Liu Bao-Lin
b)
(a) Room temperature PL and (b) low temperature PL at 77 K. The full spectrum is shown in the inset.