Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates*
Liu Jian-Minga)†, Zhang Jiea), Lin Wen-Yua), Ye Meng-Xina), Feng Xiang-Xua), Zhang Dong-Yana), Steve Dinga), Xu Chen-Kea), Liu Bao-Linb)
       
(a) Room temperature PL and (b) low temperature PL at 77 K. The full spectrum is shown in the inset.