Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates<xref ref-type="fn" rid="cpb142721fn1">*</xref>

Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates*

Liu Jian-Ming^a)†, Zhang Jie^a), Lin Wen-Yu^a), Ye Meng-Xin^a), Feng Xiang-Xu^a), Zhang Dong-Yan^a), Steve Ding^a), Xu Chen-Ke^a), Liu Bao-Lin^b)

(a) Cross-section SEM and (b) CL image of samples grown at 1013 mbar and 500 mbar. (b) Cross-section SEM and (d) CL image of the sample grown at 500 mbar. In panel (d), the red bars indicate that a lot of dislocations and stack faults gather in the strips connection location.