Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates<xref ref-type="fn" rid="cpb142721fn1">*</xref>

Effect of pressure on the semipolar GaN (10-11) growth mode on patterned Si substrates*

Liu Jian-Ming^a)†, Zhang Jie^a), Lin Wen-Yu^a), Ye Meng-Xin^a), Feng Xiang-Xu^a), Zhang Dong-Yan^a), Steve Ding^a), Xu Chen-Ke^a), Liu Bao-Lin^b)

SEM image shows the low pressure (500 mbar) growth of (10-11) GaN on the patterned Si (001) substrate with different temperatures: panels (a) and (c) are the plan view SEM and cross-section SEM of the sample grown at 1150 °C; panels (b) and (d) are the SEM images of the sample grown at 1190 °C.