Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate<xref ref-type="fn" rid="cpb142410fn1">*</xref>

Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate*

Ni Yi-Qiang, He Zhi-Yuan, Yao Yao, Yang Fan, Zhou De-Qiu, Zhou Gui-Lin, Shen Zhen, Zhong Jian, Zheng Yue, Zhang Bai-Jun, Liu Yang†

(a) Output I – V properties and (b) semi-logarithmic transfer characteristic recorded at V _DS = 8 V for HFET fabricated on samples B₀ and B₁.