Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate*
Ni Yi-Qiang, He Zhi-Yuan, Yao Yao, Yang Fan, Zhou De-Qiu, Zhou Gui-Lin, Shen Zhen, Zhong Jian, Zheng Yue, Zhang Bai-Jun, Liu Yang†
       
Room-temperature photoluminescence spectrum. The inset shows the 2DEG mobility under 5 K against the ratio of the band edge intensity ( I BE/ I BE0) ratio.