Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection<xref ref-type="fn" rid="cpb142575fn1">*</xref>

Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection*

Zhao Yu-Kun^a),^b), Li Yu-Feng^a),^b), Huang Ya-Ping^a),^b), Wang Hong^a),^b), Su Xi-Lin^c), Ding Wen^a),^b), Yun Feng^a),^b),^c)†

(a) Electron and (b) hole concentrations distributed within the active region of LEDs with uniform and chirped MQW structures at 600 mA/mm².