Characterization of CoPt nanowire fabricated by glancing angle deposition
Satoshi Kitaia),b)†, Zhang Zheng-Juna), Shi Jib), Yoshio Nakamurab)
       
SEM images of #5 after annealing. (a) 300 °C, (b) 400 °C, (c) 500 °C, and (d) 600 °C.