Influence of heavy ion irradiation on DC and gate-lag performance of AlGaN/GaN HEMTs*
Lei Zhi-Fenga),b), Guo Hong-Xiac)†, Zeng Changa), Chen Huia), Wang Yuan-Shenga), Zhang Zhan-Ganga)
       
Spatial distributions of the EL intensity of the device in off-state ( V gs = −10 V, 50× objective) (a) before and (b) after irradiation.