Influence of heavy ion irradiation on DC and gate-lag performance of AlGaN/GaN HEMTs*
Lei Zhi-Fenga),b), Guo Hong-Xiac)†, Zeng Changa), Chen Huia), Wang Yuan-Shenga), Zhang Zhan-Ganga)
       
Gate leakage curves of the HEMT device before and after irradiation.