Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor<xref ref-type="fn" rid="cpb142178fn1">*</xref>

Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor*

Zhou Xing-Ye†, Feng Zhi-Hong‡, Wang Yuan-Gang, Gu Guo-Dong, Song Xu-Bo, Cai Shu-Jun

Comparison of current collapse between V _ds = 4 V and V _ds = 10 V without thermal effect: (a) transient current response; (b) the corresponding electric field E _y along the y direction at x = 0.1 μm for the time t = 1 μs.