Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor*
Zhou Xing-Ye†, Feng Zhi-Hong‡, Wang Yuan-Gang, Gu Guo-Dong, Song Xu-Bo, Cai Shu-Jun
       
Trap occupation maps at t = 1 μs after turning on the device at (a) V gsQ = 0, V dsQ = 0; (b) V gsQ = −8 V, V dsQ = 10 V.