Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor<xref ref-type="fn" rid="cpb142178fn1">*</xref>

Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor*

Zhou Xing-Ye†, Feng Zhi-Hong‡, Wang Yuan-Gang, Gu Guo-Dong, Song Xu-Bo, Cai Shu-Jun

Simulation results of gate-lag transient of Al_0.3Ga_0.7N/GaN HEMT with only surface donor traps.