Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor<xref ref-type="fn" rid="cpb142594fn1">*</xref>

Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor*

Yu Xin-Hai†, Chai Chang-Chun, Liu Yang, Yang Yin-Tang, Xi Xiao-Wen

The DC characteristic of the pHEMT sample: I _DS versus V _DS for increasing V _GS.