Simulation and experimental study of high power microwave damage effect on AlGaAs/InGaAs pseudomorphic high electron mobility transistor*
Yu Xin-Hai†, Chai Chang-Chun, Liu Yang, Yang Yin-Tang, Xi Xiao-Wen
       
Distributions of current density (A/cm2) at (a) 1.2 ns and (b) 1.8 ns.