Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect*
Yuan Ji-Rena),b)†, Huang Hai-Bina), Deng Xin-Huab), Liang Xiao-Junb), Zhou Nai-Gena), Zhou Langa)‡
       
Variations of external quantum efficiency of the devices with/without IPV with incident wavelength when R f is 0.99 and R b is 0.999.