Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect
*
Yuan Ji-Ren
a),
b)†
, Huang Hai-Bin
a)
, Deng Xin-Hua
b)
, Liang Xiao-Jun
b)
, Zhou Nai-Gen
a)
, Zhou Lang
a)‡
Schematic of the IPV effect, showing that two sub-bandgap photons ( h ν
1
and h ν
2
) create an electron-hole pair via impurity level E
t