Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect*
Yuan Ji-Rena),b)†, Huang Hai-Bina), Deng Xin-Huab), Liang Xiao-Junb), Zhou Nai-Gena), Zhou Langa)‡
       
Schematic of the IPV effect, showing that two sub-bandgap photons ( h ν 1 and h ν 2) create an electron-hole pair via impurity level E t