An ultra-low specific on-resistance trench LDMOS with a U-shaped gate and accumulation layer*
Li Peng-Cheng, Xiao-Rong Luo†, Luo Yin-Chun, Zhou Kun, Shi Xian-Long, Zhang Yan-Hui, Lv Meng-Shan
       
A comparison of R on,sp versus BV for UG LDMOS among different RESURF effects, ENBULF LDMOS, and the latest TLDMOS.