An ultra-low specific on-resistance trench LDMOS with a U-shaped gate and accumulation layer
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Li Peng-Cheng, Xiao-Rong Luo†
, Luo Yin-Chun, Zhou Kun, Shi Xian-Long, Zhang Yan-Hui, Lv Meng-Shan
A comparison of R
on,sp
versus BV for UG LDMOS among different RESURF effects, ENBULF LDMOS, and the latest TLDMOS.