An ultra-low specific on-resistance trench LDMOS with a U-shaped gate and accumulation layer<xref ref-type="fn" rid="cpb141415fn1">*</xref>

An ultra-low specific on-resistance trench LDMOS with a U-shaped gate and accumulation layer*

Li Peng-Cheng, Xiao-Rong Luo†, Luo Yin-Chun, Zhou Kun, Shi Xian-Long, Zhang Yan-Hui, Lv Meng-Shan

Flow line distributions of (a) UG LDMOS (12.4 mΩ·cm²) and (b) CT LDMOS (346.6 mΩ·cm²) (5 × 10⁻⁸ A·μm⁻¹/contour) with the optimal doping concentration of the drift region. (c) Current density distributions under the source ( y = 10.0 μm).