Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs
Charmi Morteza†
Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs |
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Charmi Morteza†
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| Illustration of the capacitor model of 2D electrostatics, (a) the conduction band profile under high gate and drain bias with the inversion layer charge at the top of the barrier identified, (b) a three-capacitor model that describes the control of the potential at the top of the barrier. |
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