Room-temperature terahertz detection based on CVD graphene transistor*
Yang Xin-Xina),b), Sun Jian-Donga), Qin Huaa)†, Lv Lia),b), Su Li-Nac), Yan Bod), Li Xin-Xinga), Zhang Zhi-Penga), Fang Jing-Yued)
       
(a) Schematic cross section and equivalent circuit of the detector. (b) Raman spectra of the graphene channel before the fabrication. (c) Optical microscopic images of the detector. Insets: the top shows the dotted box before the ALD process of Al2O3; the bottom shows the dotted box after the ALD, the deposition of the top gate and the lift-off.