Improvement of mobility edge model by using new density of states with exponential tail for organic diode<xref ref-type="fn" rid="cpb142072fn1">*</xref>

Improvement of mobility edge model by using new density of states with exponential tail for organic diode*

Muhammad Ammar Khan, Sun Jiu-Xun†

Experimental (symbols)^{[ 38 , 39 ]} and theoretical (dashed lines: Gaussian DOS; solid lines: new DOS) J – V curves at different temperatures of an NRS-PPV hole only diode, with thickness L = 560 nm.