Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up<xref ref-type="fn" rid="cpb142021fn1">*</xref>

Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up*

Chen Rui^a),^b)†, Han Jian-Wei^a), Zheng Han-Sheng^a),^b), Yu Yong-Tao^a),^b), Shangguang Shi-Peng^a), Feng Guo-Qiang^a), Ma Ying-Qi^a)

Changes of discharge current (a) and supply voltage and current (b) with time for the test device under an ESD voltage of 500 V.