Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H–SiC photoconductive switches*
Zhou Tian-Yua),b), Liu Xue-Chaoa)†, Huang Weia), Dai Chong-Chonga),b), Zheng Yan-Qinga), Shi Er-Weia)
       
On-state resistance and peak photocurrent of PCSS-L1 and PCSS-L2 as a function of optical trigger energy at 355 nm and voltage bias of 2.5 kV.