Boron implanted emitter for n-type silicon solar cell*
Liang Peng†, Han Pei-De, Fan Yu-Jie, Xing Yu-Peng
       
(a) SIMS measured (symbols) and TCAD simulated (lines) doping profiles for some typically selected boron implanted samples before and after annealing. (b) TCAD simulated remnant interstitial cluster concentration profiles for the boron annealed samples in panel (a).