Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes<xref ref-type="fn" rid="cpb141870fn1">*</xref>

Performance improvement of GaN-based light-emitting diodes transferred from Si (111) substrate onto electroplating Cu submount with embedded wide p-electrodes*

Liu Ming-Gang†, Wang Yun-Qian†, Yang Yi-Bin†, Lin Xiu-Qi, Xiang Peng, Chen Wei-Jie, Han Xiao-Biao, Zang Wen-Jie, Liao Qiang, Lin Jia-Li, Luo Hui, Wu Zhi-Sheng, Liu Yang, Zhang Bai-Jun‡

HR-XRD 2 θ / ω scans around GaN (0002) of the LED film on Si before and after etching by ICP-RIE, and the embedded wide p-electrode LED on Cu, respectively. The diffraction peaks of GaN (0002) are shown in the inset.